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Product Description
Manufacturer Part Number: P-Q-AS395H
The AS395 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/Hz typ @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the AS395 an excellent choice for demanding preamplifier applications.Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the AS395 an excellent choice for current mirrors. A low value of bulk resistance makes the AS395 an ideal component for applications requiring accurate logarithmic conformance.
To ensure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter breakdown condition which can result in degradation of gain and matching performance due to excessive breakdown current.
The AS395H are available in the 8-pin metal can TO5-8
Features
The AS395 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/Hz typ @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the AS395 an excellent choice for demanding preamplifier applications.Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the AS395 an excellent choice for current mirrors. A low value of bulk resistance makes the AS395 an ideal component for applications requiring accurate logarithmic conformance.
To ensure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter breakdown condition which can result in degradation of gain and matching performance due to excessive breakdown current.
The AS395H are available in the 8-pin metal can TO5-8
Features
- Dual matched PNP transistor
- Low offset voltage: 100 µV max
- Low noise: 1 nV/Hz @ 1 kHz typ
- High gain: 100 min
- High gain bandwidth: 190 MHz typ
- Tight gain matching: 3% max
- Excellent logarithmic conformance
| Max. Collector-Base Voltage (BVCBO) | 36 V | |
| Max. Collector-Collector Voltage (BVCC) | 36 V | |
| Max. Collector-Emitter Voltage (BVCEO) | 36 V | |
| Max. Collector Current (IC) | 20 mA | |
| Max. Emitter-Emitter Voltage (BVEE) | 36 V | |
| Max. Emitter Current (IE) | 20 mA | |
| Typ. Collector Saturation Voltage | 0.1 V | |
| Typ. Current Gain (IC = 1 mA) | 165 | |
| Typ. Current Gain (IC = 10 µA) | 120 | |
| Typ. Current Gain (IC = 100 µA) | 150 | |
| Typ. Current Gain Matching | 0.5% | |
| Typ. Leakage Current | 200 pA | |
| Typ. Offset Current Collector-Base | 6 nA | |
| Typ. Offset Voltage | 40 µV | |
| Typ. Offset Voltage Change vs.Collector Current | 12 µV | |
| Typ. Offset Voltage Change vs.Collector Voltage | 11 µV |
| Packaging Dimensions | 0.623 in. × 0.368 in. × 0.368 in. | |
| Weight (Packaging) | 0.002 lbs. |
Attention CA Residents: Prop 65 Warning
WARNING:
This product can expose you to chemicals which are known to the State of California to cause cancer, birth defects, or other reproductive harm. For more information, go to www.p65warnings.ca.gov.
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