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Product Description
Manufacturer Part Number: P-Q-AS394H
The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an
order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range.
To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.
The AS394H is available in an 8-pin metal can TO5-8 package.
Features
The AS394H is a junction isolated ultra well-matched monolithic NPN transistor pair with an
order of magnitude improvement in matching over conventional transistor pairs. Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances are very low, giving very low noise and operating over a wide current range.
To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.
The AS394H is available in an 8-pin metal can TO5-8 package.
Features
- "Ideal" and identical transistors
- Common-mode rejection ratio > 120dB
- Emitter-base offset voltage < 100µV
- Emitter-base offset voltage temperature drift 0.1µV/°C
- Current gain (hFE) matched < 2%
- Parameters are guaranteed in the range of collector current of 10µA to 1mA
- Noise Voltage Density of 1.8 nV /Hz
- Ideal logarithmic properties
| Max. Base-Emitter Current | 10mA | |
| Max. Collector-Base Voltage | 40V | |
| Max. Collector- Collector Leakage | 5 nA | |
| Max. Collector-Collector Voltage | 40V | |
| Max. Collector-Emitter Voltage | 40V | |
| Max. Collector-Substrate Voltage | 40V | |
| Max. Collector Current | 20mA | |
| Max. Emitter-Base Offset Voltage | 150 µV | |
| Min. Input Voltage Noise | 1.8 nV /Hz | |
| Typ. Change in Emitter-Base Offset Voltage vs Collector-Base Voltage | 10 µV | |
| Typ. Change in Emitter-Base Offset Voltage vs Collector Current | 5 µV | |
| Typ. Collector-Base Leakage | 0.05 nA | |
| Typ. Collector to Emitter Saturation Voltage (IC=1 mA, IB=10 µA) | 0.2 V | |
| Typ. Collector to Emitter Saturation Voltage (IC=1 mA, IB=100 µA) | 0.1 V | |
| Typ. Current Gain (IC=1 mA) | 700 | |
| Typ. Current Gain (IC=1 µA) | 300 | |
| Typ. Current Gain (IC=10 µA) | 450 | |
| Typ. Current Gain (IC=100 µA) | 550 | |
| Typ. Current Gain Match | 0.5% |
| Packaging Dimensions | 0.623 in. × 0.368 in. × 0.368 in. | |
| Weight (Packaging) | 0.002 lbs. |
Attention CA Residents: Prop 65 Warning
WARNING:
This product can expose you to chemicals which are known to the State of California to cause cancer, birth defects, or other reproductive harm. For more information, go to www.p65warnings.ca.gov.
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